? 2008 ixys corporation, all rights reserved genx3 tm 600v igbt symbol test conditions maximum ratings v ces t c = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 60 a i c110 t c = 110c 30 a i cm t c = 25c, 1ms 150 a ssoa v ge = 15v, t vj = 125c, r g = 5 i cm = 60 a (rbsoa) clamped inductive load @ 600v p c t c = 25c 220 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220 & to-247) 1.13/10 nm/lb.in. weight to-220 2.5 g to-263 3.0 g to-263 3.0 g ds100012a(11/08) IXGA30N60C3 ixgp30n60c3 ixgh30n60c3 g = gate c = collector e = emitter tab = collector symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.5 5.5 v i ces v ce = v ces 15 a v ge = 0v t j = 125c 300 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 20a, v ge = 15v, note 1 2.6 3.0 v t j = 125c 1.8 v v ces = 600v i c110 = 30a v ce(sat) 3.0v t fi(typ) = 47ns high speed pt igbts for 40-100khz switching features optimized for low switching losses square rbsoa international standard packages advantages high power density low gate drive requirement applications high frequency power inverters ups motor drives smps pfc circuits battery chargers welding machines lamp ballasts to-247 (ixgh) g c e c (tab) to-263 (ixga) g e c(tab) to-220 (ixgp) g e c c(tab)
ixys reserves the right to change limits, test conditions and dimensions. IXGA30N60C3 ixgp30n60c3 ixgh30n60c3 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 20a, v ce = 10v, note 1 9 16 s c ies 915 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 78 pf c res 32 pf q g 38 nc q ge i c = 20a, v ge = 15v, v ce = 0.5 ? v ces 8 nc q gc 17 nc t d(on) 16 ns t ri 26 ns e on 0.27 mj t d(off) 42 75 ns t fi 47 ns e off 0.09 0.18 mj t d(on) 17 ns t ri 28 ns e on 0.44 mj t d(off) 70 ns t fi 90 ns e off 0.33 mj r thjc 0.56 c/w r thcs to-220 0.50 c/w to-247 0.21 c/w note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 inductive load, t j = 25c i c = 20a, v ge = 15v v ce = 300v, r g = 5 inductive load, t j = 125c i c = 20a, v ge = 15v v ce = 300v, r g = 5 to-263 (ixga) outline pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixgp) outline to-247 (ixgh) ad outline 1 = gate 2 = collector 3 = emitter tab = collector
? 2008 ixys corporation, all rights reserved fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 v ce - volts i c - amperes v ge = 15 v 13 v 7v 9v 11v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 12 14 16 18 20 v ce - volts i c - amperes v ge = 15v 7v 9v 11v 13v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ce - volts i c - amperes v ge = 15 v 13 v 11 v 7v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 40a i c = 20a i c = 10a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2.5 3.0 3.5 4.0 4.5 5.0 5.5 7 8 9 101112131415 v ge - volts v ce - volts i c = 40 a 20 a 10 a t j = 25oc fig. 6. input admittance 0 10 20 30 40 50 60 70 567891011 v ge - volts i c - amperes t j = 125oc 25oc - 40oc IXGA30N60C3 ixgp30n60c3 ixgh30n60c3
ixys reserves the right to change limits, test conditions and dimensions. IXGA30N60C3 ixgp30n60c3 ixgh30n60c3 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 20 22 24 0 1020304050607080 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 100 200 300 400 500 600 v ce - volts i c - amperes t j = 125oc r g = 5 ? fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v ge - volts v ce = 300v i c = 20a i g = 10 ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2008 ixys corporation, all rights reserved fig. 12. inductive switching energy loss vs. gate resistance 0.2 0.3 0.4 0.5 0.6 0.7 0.8 4 6 8 101214161820 r g - ohms e off - millijoules 0.2 0.4 0.6 0.8 1.0 1.2 1.4 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 300v i c = 40a i c = 20a fig. 17. inductive turn-off switching times vs. junction temperature 20 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 20 30 40 50 60 70 80 90 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 300v i c = 40a, 20a fig. 15. inductive turn-off switching times vs. gate resistance 80 90 100 110 120 130 140 150 160 170 180 4 6 8 10 12 14 16 18 20 r g - ohms t f - nanoseconds 40 50 60 70 80 90 100 110 120 130 140 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 300v i c = 40a i c = 20a fig. 13. inductive switching energy loss vs. collector current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 10 15 20 25 30 35 40 i c - amperes e off - millijoules 0.0 0.2 0.4 0.6 0.8 1.0 1.2 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 300v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 300v i c = 40a i c = 20a fig. 16. inductive turn-off switching times vs. collector current 0 20 40 60 80 100 120 140 160 180 10 15 20 25 30 35 40 i c - amperes t f - nanoseconds 20 30 40 50 60 70 80 90 100 110 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 300v t j = 125oc t j = 25oc IXGA30N60C3 ixgp30n60c3 ixgh30n60c3
ixys reserves the right to change limits, test conditions and dimensions. IXGA30N60C3 ixgp30n60c3 ixgh30n60c3 ixys ref: g_30n60c3(4d) 7-25-08 fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 10 15 20 25 30 35 40 i c - amperes t r - nanoseconds 10 12 14 16 18 20 22 24 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 ? ?
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